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onsemi 2SC2812N6-TB-E — Discrete Semiconductors

onsemi 2SC2812N6-TB-E

MPN2SC2812N6-TB-E
Obsolete
$0.2300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC2812N6-TB-E specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown50 V
Current - collector (Ic)150 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce135 @ 1mA, 6V
Power - max200 mW
Frequency100MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic500mV @ 5mA, 50mA