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onsemi 2N7002ET7G — Discrete Semiconductors

onsemi 2N7002ET7G

MPN2N7002ET7G
Active

MOSFET N-CH 60V 260MA SOT23-3

$0.2100Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N7002ET7G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C260mA (Ta)
Power dissipation300mW (Tj)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs2.5Ohm @ 240mA, 10V
Gate charge (Qg) (Max) @ vgs0.81 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds40 pF @ 25 V