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onsemi 2N3906G — Discrete Semiconductors

onsemi 2N3906G

MPN2N3906G
Obsolete
$0.8600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N3906G specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown40 V
Current - collector (Ic)200 mA
DC current gain (hFE) (Min) @ ic, vce100 @ 10mA, 1V
Power - max625 mW
Frequency250MHz
Operating temperature-55°C~150°C(TJ)
PackageBulk
CaseTO-226-3, TO-92-3 Long Body
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA