1N916
onsemi
DIODE GEN PURP 100V 200MA DO35
[IN STOCK] In Stock: 27 pcs
MOQ 5 · Bag · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 1 V @ 10 mA |
| Current - reverse leakage @ vr | 5 µA @ 75 V |
| Current - average rectified | 200mA |
| Operating temperature - junction | -65°C ~ 175°C |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Package | Bag |
| Case | DO-204AH, DO-35, Axial |
| Capacitance @ vr, | 2pF @ 0V, 1MHz |
| Reverse recovery time | 4 ns |
1N916
[ALLOC] verified