BYC8DX-600,127

NXP Semiconductors

WeEn Semiconductors BYC8DX-600,127 standard fast recovery diode, 600 V reverse voltage, 8 A average rectified current, 20 ns reverse recovery time, TO-220-2 Full Pack through-hole package.

NXP Semiconductors BYC8DX-600,127
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Technical specifications

BYC8DX-600,127 specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.9 V @ 8 A
Current - reverse leakage @ vr40 µA @ 600 V
Current - average rectified8A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseTO-220-2 Full Pack
Reverse recovery time20 ns

Technical details

A 20 ns reverse recovery time keeps the recovery current spike narrow, which reduces turn-off losses and snubber dissipation in continuous-conduction-mode PFC boost stages and flyback output rectifiers. The forward voltage drop is 2.9 V at 8 A, a typical figure for a fast-recovery die at this voltage and current class.

The TO-220F full-pack case is through-hole mounted and provides full isolation between the die tab and the heatsink surface. No additional insulator or thermal pad is needed, which simplifies assembly and reduces the parts count per rectifier. The junction temperature limit is 150 °C maximum.

For BOM lines that need a fast-recovery 600 V 8 A diode in a TO-220F, this part is a current-design fit.

BYC8DX-600,127
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