BAP64Q,125

NXP Semiconductors

NXP BAP64Q,125 PIN diode, 2 pair common anode + common cathode, 100V peak reverse, 100 mA max, 1.35 Ohm @ 100mA/100MHz, 0.35pF @ 20V/1MHz, 125 mW, SC-74A SOT-753, 5-TSOP, -65 to 150°C, active, RoHS3.

NXP Semiconductors BAP64Q,125
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[IN STOCK] In Stock: 64 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAP64Q,125 specifications
Parameter / AttributeSpecification / Value
Diode typePIN - 2 Pair CA + CC
Voltage - peak reverse100V
Current - max100 mA
Power dissipation125 mW
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74A, SOT-753
Resistance @ if,1.35Ohm @ 100mA, 100MHz
Capacitance @ vr,0.35pF @ 20V, 1MHz

Technical details

RF switch core — two PIN pairs in one SOT-753

On-state resistance is 1.35 Ω at 100 mA forward current, measured at 100 MHz. That insertion loss stays low enough for antenna diversity switches and gain-stage bypass paths up into the UHF band. Off-state capacitance is 0.35 pF at 20 V reverse bias, 1 MHz — isolation holds well past 1 GHz with proper layout. Peak reverse voltage rating of 100 V and continuous current capability of 100 mA cover medium-power T/R switching and variable attenuators in test equipment and base-station front ends. Power dissipation is 125 mW — watch the thermal budget in dense layouts; the SOT-753 footprint doesn't sink much heat.

Junction temperature range — full mil-spec span

Operating junction temperature range is -65°C to 150°C. The 125 mW limit is the package constraint.

Active lifecycle status and ROHS3 compliant.

BAP64Q,125
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