PXP011-20QXJ

Nexperia USA Inc.

PXP011-20QX/SOT8002/MLPAK33

Nexperia USA Inc. PXP011-20QXJ
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[IN STOCK] In Stock: 35 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PXP011-20QXJ specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C10.5A (Ta), 56.6A (Tc)
Power dissipation1.8W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1.25V @ 250µA
Rds on (Max) @ id, vgs11.4mOhm @ 10.5A, 4.5V
Gate charge (Qg) (Max) @ vgs65.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4200 pF @ 10 V
PXP011-20QXJ
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