PSMN1R7-30YL,115

Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc. PSMN1R7-30YL,115
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[IN STOCK] In Stock: 19 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PSMN1R7-30YL,115 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation109W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-100, SOT-669
Vgs(th) (Max) @ id2.15V @ 1mA
Rds on (Max) @ id, vgs1.7mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs77.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5057 pF @ 12 V
PSMN1R7-30YL,115
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