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Nexperia USA Inc. PSMN1R6-30MLHX

Nexperia USA Inc. PSMN1R6-30MLHX

MPNPSMN1R6-30MLHX
Active

MOSFET N-CH 30V 160A LFPAK33

$1.65Ref. price · indicative, final on quote
PackagingSOT-1210, 8-LFPAK33 (5-Lead)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN1R6-30MLHX specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C160A (Ta)
Power dissipation106W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-1210, 8-LFPAK33 (5-Lead)
Vgs(th) (Max) @ id2.2V @ 1mA
Rds on (Max) @ id, vgs1.9mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2369 pF @ 15 V