PSMN1R0-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
[IN STOCK] In Stock: 49 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Schottky Diode (Body) |
| Case | SC-100, SOT-669 |
| Vgs(th) (Max) @ id | 2.2V @ 1mA |
| Rds on (Max) @ id, vgs | 0.89mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5308 pF @ 12 V |
PSMN1R0-25YLDX
[ALLOC] verified