PSMN038-100YLX

Nexperia USA Inc.

MOSFET N-CH 100V 30A LFPAK56

Nexperia USA Inc. PSMN038-100YLX
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PSMN038-100YLX specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation94.9W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-100, SOT-669
Vgs(th) (Max) @ id2.1V @ 1mA
Rds on (Max) @ id, vgs37.5mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs39.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1905 pF @ 25 V
PSMN038-100YLX
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