PMZB600UNEYL

Nexperia USA Inc.

MOSFET N-CH 20V 600MA DFN1006B-3

Nexperia USA Inc. PMZB600UNEYL
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMZB600UNEYL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C600mA (Ta)
Power dissipation360mW (Ta), 2.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs620mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds21.3 pF @ 10 V
PMZB600UNEYL
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