PMZB390UNEYL

Nexperia USA Inc.

MOSFET N-CH 30V 900MA DFN1006B-3

Nexperia USA Inc. PMZB390UNEYL
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMZB390UNEYL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C900mA (Ta)
Power dissipation350mW (Ta), 5.43W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs470mOhm @ 900mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds41 pF @ 15 V
PMZB390UNEYL
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