PMZ1000UN,315

Nexperia USA Inc.

MOSFET N-CH 30V 480MA DFN1006-3

Nexperia USA Inc. PMZ1000UN,315
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMZ1000UN,315 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C480mA (Ta)
Power dissipation350mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSC-101, SOT-883
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs1Ohm @ 200mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.89 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds43 pF @ 25 V
PMZ1000UN,315
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