Nexperia USA Inc. PMXB75UPEZ
MPNPMXB75UPEZ
Active
MOSFET P-CH 20V 2.9A DFN1010D-3
$0.42Ref. price · indicative, final on quote
Packaging3-XDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.9A (Ta) |
| Power dissipation | 317mW (Ta), 8.33W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 85mOhm @ 2.9A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 608 pF @ 10 V |