MOSFET N-CH 20V 3.2A DFN1010D-3
$0.46Ref. price · indicative, final on quote
Packaging3-XDFN Exposed Pad
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Ta) |
| Power dissipation | 400mW (Ta), 8.33W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XDFN Exposed Pad |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 54mOhm @ 3.2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 551 pF @ 10 V |