PMV48XP,215

Nexperia USA Inc.

MOSFET P-CH 20V 3.5A TO236AB

Nexperia USA Inc. PMV48XP,215
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MOQ 2 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMV48XP,215 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.5A (Ta)
Power dissipation510mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.25V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 2.4A, 4.5V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 10 V
PMV48XP,215
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