PMV30UN2R

Nexperia USA Inc.

MOSFET N-CH 20V 4.2A TO236AB

Nexperia USA Inc. PMV30UN2R
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MOQ 10 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMV30UN2R specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C4.2A (Ta)
Power dissipation490mW (Ta), 5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 4.2A, 4.5V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds655 pF @ 10 V
PMV30UN2R
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