Nexperia USA Inc. PMPB29XNE,115
MPNPMPB29XNE,115
Active
MOSFET N-CH 30V 5A DFN2020MD-6
$0.46Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Power dissipation | 1.7W (Ta), 12.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 33mOhm @ 5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 18.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 15 V |