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Nexperia USA Inc. PMPB27EP,115

Nexperia USA Inc. PMPB27EP,115

MPNPMPB27EP,115
Active

MOSFET P-CH 30V 6.1A DFN2020MD-6

$0.52Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMPB27EP,115 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6.1A (Ta)
Power dissipation1.7W (Ta), 12.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 6.1A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1570 pF @ 15 V