PMN48XP,125

Nexperia USA Inc.

MOSFET P-CH 20V 4.1A 6TSOP

Nexperia USA Inc. PMN48XP,125
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMN48XP,125 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4.1A (Ta)
Power dissipation530mW (Ta), 6.25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSC-74, SOT-457
Vgs(th) (Max) @ id1.25V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 2.4A, 4.5V
Gate charge (Qg) (Max) @ vgs13 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 10 V
PMN48XP,125
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