PMG85XPH

Nexperia USA Inc.

MOSFET P-CH 20V 2A 6TSSOP

Nexperia USA Inc. PMG85XPH
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMG85XPH specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C2A (Tj)
Power dissipation375mW (Ta), 2.4W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.15V @ 250µA
Rds on (Max) @ id, vgs115mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs7.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds560 pF @ 10 V
PMG85XPH
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