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Nexperia USA Inc. PMDXB600UNELZ — Discrete Semiconductors

Nexperia USA Inc. PMDXB600UNELZ

MPNPMDXB600UNELZ
Active

20 V, DUAL N-CHANNEL TRENCH MOSF

$0.45Ref. price · indicative, final on quote
Packaging6-XFDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMDXB600UNELZ specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C600mA
Power - max380mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-XFDFN Exposed Pad
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs620mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.7nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds21.3pF @ 10V