PMDXB1200UPEZ

Nexperia USA Inc.

MOSFET 2P-CH 30V 0.41A 6DFN

Nexperia USA Inc. PMDXB1200UPEZ
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMDXB1200UPEZ specifications
Parameter / AttributeSpecification / Value
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C410mA
Power - max285mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-XFDFN Exposed Pad
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs1.4Ohm @ 410mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.2nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds43.2pF @ 15V
PMDXB1200UPEZ
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