PMCPB5530X,115

Nexperia USA Inc.

MOSFET N/P-CH 20V 6HUSON

Nexperia USA Inc. PMCPB5530X,115
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMCPB5530X,115 specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4A (Ta), 3.4A (Ta)
Power - max490mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-UFDFN Exposed Pad
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs34mOhm @ 3A, 4.5V
Gate charge (Qg) (Max) @ vgs21.7nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds660pF @ 10V
PMCPB5530X,115
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