Nexperia USA Inc. PHB21N06LT,118
MPNPHB21N06LT,118
Active
MOSFET N-CH 55V 19A D2PAK
$1.04Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 19A (Tc) |
| Power dissipation | 56W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 70mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.4 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 650 pF @ 25 V |