NXV75UPR

Nexperia USA Inc. · TrenchMOS™ Series

NXV75UP/SOT23/TO-236AB

Nexperia USA Inc. NXV75UPR
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[IN STOCK] In Stock: 1,555 pcs
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NXV75UPR specifications
Parameter / AttributeSpecification / Value
SeriesTrenchMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.8A (Ta)
Power dissipation340mW (Ta), 2.1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 1.8A, 4.5V
Gate charge (Qg) (Max) @ vgs6.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 10 V
NXV75UPR
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