NXV100XPR

Nexperia USA Inc.

NXV100XP/SOT23/TO-236AB

Nexperia USA Inc. NXV100XPR
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NXV100XPR specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C1.5A (Ta)
Power dissipation340mW (Ta), 2.1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs140mOhm @ 1.5A, 4.5V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds354 pF @ 15 V
NXV100XPR
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