BSN20BKR

Nexperia USA Inc.

MOSFET N-CH 60V 265MA TO236AB

Nexperia USA Inc. BSN20BKR
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSN20BKR specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C265mA (Ta)
Power dissipation310mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.4V @ 250µA
Rds on (Max) @ id, vgs2.8Ohm @ 200mA, 10V
Gate charge (Qg) (Max) @ vgs0.49 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds20.2 pF @ 30 V
BSN20BKR
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