Nexperia USA Inc. BAS21QB-QZ
MPNBAS21QB-QZ
Active
DIODE GP 200V 250MA DFN1110D-3
$0.26Ref. price · indicative, final on quote
Packaging3-XDFN Exposed Pad
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q100
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q100 |
| Diode type | Standard |
| Mounting | Surface Mount, Wettable Flank |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 1.25 V @ 200 mA |
| Current - reverse leakage @ vr | 100 nA @ 200 V |
| Current - average rectified | 250mA |
| Operating temperature - junction | 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 3-XDFN Exposed Pad |
| Capacitance @ vr, | 5pF @ 0V, 1MHz |
| Reverse recovery time | 50 ns |