VP3203N3-G
Microchip Technology
MOSFET P-CH 30V 650MA TO92-3
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Bag · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 650mA (Tj) |
| Power dissipation | 740mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bag |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vgs(th) (Max) @ id | 3.5V @ 10mA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3A, 10V |
| Input capacitance (Ciss) (Max) @ vds | 300 pF @ 25 V |
VP3203N3-G
[ALLOC] verified