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Microchip Technology VP2206N3-G

Microchip Technology VP2206N3-G

MPNVP2206N3-G
End of Life

MOSFET P-CH 60V 640MA TO92-3

$2.43Ref. price · indicative, final on quote
PackagingTO-226-3, TO-92-3 (TO-226AA)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

VP2206N3-G specifications
ParameterValue
FET typeP-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C640mA (Tj)
Power dissipation740mW (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBag
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id3.5V @ 10mA
Rds on (Max) @ id, vgs900mOhm @ 3.5A, 10V
Input capacitance (Ciss) (Max) @ vds450 pF @ 25 V