VN10KN3-G

Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology VN10KN3-G
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Technical specifications

VN10KN3-G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C310mA (Tj)
Power dissipation1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBag
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds60 pF @ 25 V
VN10KN3-G
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