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Microchip Technology TP2635N3-G

TP2635N3-G - Microchip Technology

MPNTP2635N3-G
End of Life

MOSFET P-CH 350V 180MA TO92-3

$1.89Ref. price · indicative, final on quote
PackagingTO-226-3, TO-92-3 (TO-226AA)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TP2635N3-G specifications
ParameterValue
FET typeP-Channel
MountingThrough Hole
Drain to source voltage350 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C180mA (Tj)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBag
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs15Ohm @ 300mA, 10V
Input capacitance (Ciss) (Max) @ vds300 pF @ 25 V