Microchip Technology TP2104N3-G-P003 — Discrete Semiconductors
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RoHS Compliant · Lead-Free EIA-481 Standard
Microchip Technology / Discrete Semiconductors

Microchip TP2104N3-G-P003 P-Channel MOSFET

MPN TP2104N3-G-P003
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Microchip Technology TP2104N3-G-P003 P-Channel MOSFET, 40 V drain-source, 175 mA continuous drain, 6 Ohm Rds(on), TO-92-3 through-hole, Tape & Reel / Cut Tape.

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[SPEC] Essential Parameters Snapshot Full Specifications (14)
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Output / Current 40 V

Full Technical Specifications

14 Parameters
TP2104N3-G-P003 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C175mA (Tj)
Power dissipation740mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs6Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds60 pF @ 25 V
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Technical Details & Description

Load-switching polarity and voltage ceiling

The TP2104N3-G-P003: The P-Channel polarity means the load connects between the drain and ground, with the source tied to the positive rail — the gate is pulled low to turn the FET on, making it a natural fit for high-side load switching in battery-powered or positive-rail systems where an N-Channel would require a charge-pump driver.

On-resistance and conduction loss budget

Maximum Rds(on) is 6 Ohms at 500 mA drain current with a 10 V gate drive. At the rated 175 mA continuous current, the conduction loss is I²R = 0.175² × 6 ≈ 184 mW — about a quarter of the 740 mW power dissipation budget at 25°C ambient.

Thermal envelope and junction temperature margin

The 740 mW power dissipation is specified at 25°C ambient in free air; derating applies above that temperature. With the 60 pF input capacitance at 25 V drain-source, the switching losses in a low-frequency load-switch application are negligible compared to the conduction loss — the thermal budget is dominated by the DC current and Rds(on).

Housed in the TO-92-3 (TO-226AA) through-hole package, the TP2104N3-G-P003 mates with standard 0.100-inch pitch breadboard, perfboard, or PCB layouts. The three leads — gate, drain, source — are arranged in a single in-line row; the supplier device package is TO-92-3. For a 175 mA load, the PCB trace width to the drain and source pads should be sized for at least 0.5 mm to keep the temperature rise below 10°C in still air.

The base product number TP2104 covers the family; the N3 suffix indicates the TO-92 package, G the ROHS-compliant finish, and P003 the packaging option.

Frequently asked questions

What is the TP2104N3-G-P003's maximum drain current and voltage rating?

The maximum Rds(on) is 6 Ohms at 500 mA drain current with a 10 V gate drive.

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