Microchip Technology TP2104N3-G P-Channel MOSFET, 40 V drain-source, 175 mA continuous drain, 6 Ohm Rds(on) at 10 V, TO-92-3 through-hole package, active production.
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 175mA (Tj) |
| Power dissipation | 740mW (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bag |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 6Ohm @ 500mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 60 pF @ 25 V |
The TP2104N3-G: That 40 V Vdss covers 24 V and 28 V rails with margin; the 175 mA Id handles small solenoid, relay, and signal-level loads where an N-Channel part would need a level shifter.
The TO-92-3 through-hole package (TO-226AA) mates with standard 0.100-inch pitch breadboards and PCB layouts. Power dissipation is 740 mW at 25°C ambient, derated above that.