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Microchip Technology TP2104K1-G — Discrete Semiconductors

Microchip Technology TP2104K1-G

MPNTP2104K1-G
Active
$0.7700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TP2104K1-G specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C160mA (Tj)
Power dissipation360mW (Ta)
Operating temperature-55°C~150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs6Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds60 pF @ 25 V