3A peak, 23ns rise — medium-power gate drive in a DIP
The TC4423VPA delivers 3A peak source and sink current, enough to charge and discharge the gate capacitance of medium-power MOSFETs in under 30 ns. Typical rise time is 23 ns, fall time 25 ns — fast enough for switching frequencies above 100 kHz without excessive cross-conduction losses. Supply voltage spans 4.5V to 18V, covering both 5V logic-driven and 12V industrial gate drive rails. The inverting input logic thresholds (0.8V VIL, 2.4V VIH) are TTL and CMOS compatible, so it interfaces directly with most microcontrollers and PWM controllers without external level shifting. Two independent low-side channels in one 8-pin DIP — each channel drives its own N-channel or P-channel MOSFET. The independent channel type means the outputs are not cross-coupled; one channel can switch while the other idles, useful for dual-phase or interleaved topologies.
Through-hole PDIP — bench-friendly, reworkable
The through-hole mounting suits prototype boards, socketed test fixtures, and production runs where rework access matters — no hot-air station needed for removal. The wide temp margin means the driver's 3A output does not derate significantly until well above 85°C ambient. Shipped in tube — the standard through-hole format. No moisture-sensitive label; store on the shelf in the original tube, no dry-bake required before assembly.
Active lifecycle — no last-time-buy pressure
ROHS3 compliant — no exemptions expiring.