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Microchip Technology SST25VF010A-33-4C-SAE-T — Discrete Semiconductors

Microchip SST25VF010A-33-4C-SAE-T 1Mbit SPI Flash, 33 MHz

MPNSST25VF010A-33-4C-SAE-T
End of Life

Microchip Technology SST25 series SPI NOR flash, SST25VF010A-33-4C-SAE-T, 1 Mbit, 33 MHz, 2.7-3.6 V, 8-SOIC, Tape & Reel.

$0.81Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesSST25
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SST25VF010A-33-4C-SAE-T specifications
ParameterValue
SeriesSST25
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency33 MHz
Memory interfaceSPI
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyFLASH
Memory size1Mbit
Memory formatFLASH
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization128K x 8
Write cycle time - word, page20µs

Product details

Active 1 Mbit SPI NOR flash for code shadowing and parameter storage

The SST25VF010A-33-4C-SAE-T is a 1 Mbit SPI NOR flash from Microchip's SST25 family, organized as 128K x 8 bits.

SPI interface, 33 MHz clock, and the 20 µs page write cycle

The SPI interface uses the standard 4-wire bus (SCK, SI, SO, CS#) common to most MCU SPI peripherals. At 33 MHz, a 256-byte page reads in roughly 8 µs — fast enough for code shadowing from flash to RAM on power-up without stalling the core. Page write cycle time is 20 µs typical. That is the time the internal charge pump needs to program one page after the data is clocked in. For a firmware update writing 64 KB, the total program time is dominated by the page-write cycles, not the SPI clock. A 3.3 V LDO with ±5% regulation stays inside this window even under load.

8-SOIC narrow body — footprint and reflow compatibility

The land pattern matches the standard JEDEC MO-012 variant for narrow SOIC — no custom footprint needed. The supplier device package is 8-SOIC, confirming the same mechanical outline.

This is the commercial temperature band — suitable for indoor equipment, office peripherals, and consumer electronics. Not qualified for automotive or extended industrial environments where -40°C to +85°C is typical. RoHS3 compliant — no restricted substances above the threshold limits. The part carries no halogen or lead restrictions for EU or UKCA markets.

Frequently asked questions

What is the memory organization of the SST25VF010A-33-4C-SAE-T?

The memory is organized as 128K x 8 bits, giving a total density of 1 Mbit. The SPI interface accesses the array in 256-byte pages for write operations.

Can the 23K640-I/SN replace the SST25VF010A-33-4C-SAE-T?

No. The 23K640-I/SN is a 64 Kbit SRAM — volatile memory that loses data when power is removed. The SST25VF010A is a non-volatile NOR flash. They are not functional equivalents despite sharing an SPI interface and similar package.