MSC025SMA120B4
Microchip Technology
TRANS SJT N-CH 1200V 103A TO247
[IN STOCK] In Stock: 12 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 103A (Tc) |
| Power dissipation | 500W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +23V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 2.8V @ 3mA |
| Rds on (Max) @ id, vgs | 31mOhm @ 40A, 20V |
| Gate charge (Qg) (Max) @ vgs | 232 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 3020 pF @ 1000 V |
MSC025SMA120B4
[ALLOC] verified