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Microchip Technology MIC4104YM — Power Management (PMIC / Gate Driver)

MIC4104YM Half-Bridge Gate Driver, 2A/3A Peak, 8-SOIC

MPNMIC4104YM
End of Life

Microchip MIC4104YM, half-bridge N-channel MOSFET gate driver, 2 drivers, 2A source / 3A sink peak output, 10ns rise / 6ns fall, 9V-16V supply, -40°C to 125°C, 8-SOIC package, Tube.

$2.83Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MIC4104YM specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Voltage9V ~ 16V
Logic voltage - VIL, VIH0.8V, 2.2V
High side voltage - max (Bootstrap)118 V
Current - peak output (Source, sink)2A, 3A
Operating temperature-40°C ~ 125°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)10ns, 6ns

Product details

Half-bridge driver for N-channel MOSFETs

The Microchip MIC4104YM is a high-speed half-bridge gate driver designed to drive two N-channel MOSFETs in a half-bridge configuration. The independent channel architecture lets you control the high-side and low-side FETs separately, while the bootstrap-ready high-side driver supports a floating supply up to 118V.

The 9V to 16V supply range aligns with standard 12V bias rails found in industrial and automotive systems. Logic input thresholds of 0.8V (VIL) and 2.2V (VIH) are compatible with 3.3V and 5V controllers, so no level-shifting is needed when driving from a typical MCU or PWM controller. The non-inverting input type means a logic high on the input turns the corresponding output on directly.

Surface-mount assembly keeps the profile low for dense boards.

No last-time-buy or obsolescence risk is indicated.

Frequently asked questions

What is the peak output current of MIC4104YM?

The peak output current is 2A source and 3A sink, providing enough drive strength to switch the gate capacitance of medium-power N-channel MOSFETs quickly.