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Microchip Technology MCP6062T-E/MNY — Memory (DRAM / SRAM / Flash / EEPROM)

MCP6062T-E/MNY CMOS Op-Amp, 730 kHz, Rail-to-Rail, 8-TDFN

MPNMCP6062T-E/MNY
End of Life

Microchip MCP6062T-E/MNY, dual CMOS rail-to-rail op-amp, 730 kHz GBWP, 0.25 V/µs slew rate, 60 µA per channel supply, 1.8-6 V supply, -40 to 125°C, 8-TDFN (2x3) package.

$1.3Ref. price · indicative, final on quote
Packaging8-WFDFN Exposed Pad
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Specifications

MCP6062T-E/MNY Technical Specifications
ParameterValue
Output typeRail-to-Rail
Mounting typeSurface Mount
Amplifier typeCMOS
Voltage - input offset150 µV
Voltage - supply span1.8 V
Current - supply60µA (x2 Channels)
Current - input bias1 pA
Current - output (Channel)27 mA
Operating temperature-40°C ~ 125°C (TA)
Gain bandwidth product730 kHz
PackageTape & Reel (TR); Cut Tape (CT)
Slew rate0.25V/µs
Case8-WFDFN Exposed Pad
Number of circuits2

Product details

Dual CMOS op-amp for low-power, wide-temperature analog conditioning

The Microchip MCP6062T-E/MNY is a dual CMOS operational amplifier with rail-to-rail output, designed for applications that demand low quiescent current and a wide supply range. Each channel draws 60 µA typical supply current, making this part a fit for battery-powered instrumentation, portable medical devices, and sensor interfaces where every microamp on the rail matters. The amplifier type is CMOS, which gives it a 1 pA typical input bias current—useful when buffering high-impedance sources like pH probes or photodiodes without loading the signal. The 8-TDFN (2x3) package with exposed pad aids thermal dissipation in compact layouts, and the surface-mount footprint suits automated assembly lines.

At 60 µA per channel, the MCP6062T-E/MNY sits in the micropower class. For a dual-channel device, the total quiescent draw is 120 µA typical. In a battery-powered sensor node that spends most of its time in sleep mode, this current directly affects standby life. The 1 pA input bias current is typical for CMOS inputs; it means the designer can use high-value feedback resistors (megaohm range) without significant offset from bias current, which simplifies the gain-setting network in precision DC applications. The 150 µV typical input offset voltage is moderate for a CMOS amplifier. Designs that require sub-millivolt accuracy—like weigh scales or current-sense amplifiers—may need a trim or a chopper-stabilized part. For general-purpose signal conditioning, this offset is acceptable and keeps the BOM cost below precision-grade alternatives.

Package and mounting: 8-TDFN with exposed pad

The MCP6062T-E/MNY is supplied in an 8-WFDFN exposed-pad package, also designated as 8-TDFN (2x3). The 2 mm × 3 mm footprint saves board area compared to SOIC-8, and the exposed pad provides a low-thermal-resistance path to the PCB.

Frequently asked questions

What is the slew rate of MCP6062T-E/MNY?

The slew rate is 0.25 V/µs. This limits the large-signal bandwidth; for a 1 V peak-to-peak output, the full-power bandwidth is approximately 40 kHz.

Is MCP6062T-E/MNY rail-to-rail?

Yes, the output type is rail-to-rail. The input common-mode range is not rail-to-rail; it extends from the negative rail to approximately 1 V below the positive rail. For single-supply designs, ensure the input signal stays within that range.

What are equivalent or alternative parts to MCP6062T-E/MNY?

A close functional alternative is the MCP6272T-E/SN, which offers a 2 MHz gain-bandwidth and 0.9 V/µs slew rate in an SOIC-8 package, at a slightly higher supply current of 200 µA per channel. The MCP6L72T-E/SN is another 2 MHz option with 100 µA per channel. Both are pin-compatible in SOIC-8 but not footprint-compatible with the 8-TDFN package of the MCP6062T-E/MNY. For a drop-in TDFN replacement, the single-channel MCP6471T-E/LTY shares the same package but provides only one amplifier.