APT9M100S
Microchip Technology APT9M100S
MPNAPT9M100S
End of Life
MOSFET N-CH 1000V 9A D3PAK
$5.6Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
SeriesPOWER MOS 8™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | POWER MOS 8™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 335W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Vgs(th) (Max) @ id | 5V @ 1mA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2605 pF @ 25 V |