APT80GA90S
Microchip Technology APT80GA90S
MPNAPT80GA90S
End of Life
IGBT PT MOS 8 SINGLE 900 V 80 A
$11.94Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
SeriesPOWER MOS 8®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | POWER MOS 8® |
| IGBT type | PT |
| Input type | Standard |
| Mounting | Surface Mount |
| Voltage - collector emitter breakdown | 900 V |
| Current - collector (Ic) | 145 A |
| Current - collector pulsed | 239 A |
| Power - max | 625 W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Gate charge | 200 nC |
| Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Test condition | 600V, 47A, 4.7Ohm, 15V |
| Switching energy | 1.625mJ (on), 1.389mJ (off) |
| Td (on/off) @ 25°C | 18ns/149ns |
| Vce(on) (Max) @ vge, ic | 3.1V @ 15V, 47A |