Microchip Technology APT65GP60B2G
MPNAPT65GP60B2G
End of Life
IGBT 600V 100A 833W TMAX
$19.2Ref. price · indicative, final on quote
PackagingTO-247-3 Variant
RoHSRoHS Compliant
SeriesPOWER MOS 7®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | POWER MOS 7® |
| IGBT type | PT |
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 600 V |
| Current - collector (Ic) | 100 A |
| Current - collector pulsed | 250 A |
| Power - max | 833 W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Gate charge | 210 nC |
| Case | TO-247-3 Variant |
| Test condition | 400V, 65A, 5Ohm, 15V |
| Switching energy | 605µJ (on), 896µJ (off) |
| Td (on/off) @ 25°C | 30ns/91ns |
| Vce(on) (Max) @ vge, ic | 2.7V @ 15V, 65A |