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Microchip Technology APT60M60JFLL — Discrete Semiconductors

APT60M60JFLL MOSFET N-CH 600V 70A ISOTOP, Active

MPNAPT60M60JFLL
Active

Microchip Technology POWER MOS 7® series, N-Channel MOSFET, APT60M60JFLL, 600 V, 70 A, 60 mOhm, ISOTOP chassis mount, Tube.

$88.79Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

APT60M60JFLL specifications
ParameterValue
SeriesPOWER MOS 7®
FET typeN-Channel
MountingChassis Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±30 V
Power694.0
Package_typeTube
Capacitance_uf0.0126
StatusActive
Supply voltage600.0
Vgs(Th) (Max) @ id5 V @ 5mA
Switching current70.0
Rds on (Max) @ id, vgs60mOhm @ 35 A, 10 V
Gate charge (Qg) (Max) @ vgs289 nC @ 10 V

Product details

600 V, 70 A N-channel — the switching loss and conduction loss trade-off

The APT60M60JFLL is a 600 V, 70 A N-channel power MOSFET from Microchip's POWER MOS 7® series, in the ISOTOP chassis-mount package. The ±30 V Vgs rating gives headroom for gate drive overshoot, but the recommended drive voltage is 10 V to reach the specified Rds(on).

ISOTOP chassis mount — thermal path and board integration

The ISOTOP package (also known as ISOTOP-227) bolts directly to a heatsink or cold plate. The mounting screws torque to the package specification — typically 1.2 N·m for the M4 screws — to ensure the thermal interface material compresses evenly. The junction temperature range of -55°C to 150°C covers industrial and military ambient conditions. At 150°C junction, the Rds(on) approximately doubles from the 25°C value per the normalised curve in the datasheet — derate the continuous current accordingly. The 694 W power dissipation is the theoretical maximum at Tc = 25°C; real-world dissipation is limited by the heatsink's thermal resistance.

Frequently asked questions

What is the gate drive requirement for APT60M60JFLL?

The gate threshold voltage is 5 V max at 5 mA drain current, but the specified Rds(on) of 60 mOhm requires a 10 V gate drive. The gate is rated for ±30 V absolute maximum, giving margin for ringing. The total gate charge is 289 nC at 10 V — a gate driver capable of sourcing at least 2 A peak is recommended for switching frequencies above 50 kHz.