2N7008-G
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
[IN STOCK] In Stock: 28 pcs
MOQ 1 · Bag · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 230mA (Tj) |
| Power dissipation | 1W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bag |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 7.5Ohm @ 500mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 50 pF @ 25 V |
2N7008-G
[ALLOC] verified