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Microchip Technology 2N7000-G — Discrete Semiconductors

Microchip 2N7000-G N-Channel MOSFET, 60V 200mA TO-92-3

MPN2N7000-G
Active

Microchip Technology 2N7000-G N-Channel MOSFET, 60 V drain-source, 200 mA continuous drain, 5 Ohm Rds(on) at 10 V, TO-92-3 through-hole, Bag.

$0.4700Ref. price · indicative, final on quote
PackagingTO-226-3, TO-92-3 (TO-226AA)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

2N7000-G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C200mA (Tj)
Power dissipation1W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBag
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds60 pF @ 25 V

Product details

60 V, 200 mA N-channel — the classic small-signal switch

The 2N7000-G: It is the through-hole TO-92-3 variant of the industry-standard 2N7000 family, widely used for low-power switching, level translation, and load-driving in control and signal circuits.

Temperature range and switching parasitics

The 60 pF input capacitance at 25 V drain-source sets the switching speed ceiling — a 10 kOhm gate resistor yields a roughly 0.6 µs RC time constant, adequate for sub-100 kHz switching but not for fast PWM above that. The ±30 V maximum gate-source rating gives margin against gate-drive overshoot in noisy environments.

As an active, catalog-standard part, it is sourced through authorized distribution channels.