60 V, 600 mA PNP switch in a hermetic UB package
The Microchip Technology 2N2907AUB is a PNP general-purpose switching transistor rated for 60 V collector-emitter breakdown and 600 mA continuous collector current — the same electrical core as the industry-standard 2N2907A, but in a hermetic 3-SMD no-lead package (UB) for surface-mount assembly. Minimum DC current gain of 100 at 150 mA, 10 V means the part drives moderate base-drive loads without excessive input current — a typical saturated switch in a 24 V control loop or relay driver lands well inside the safe operating area.
Junction temperature range and what it enables
The -65 °C to 200 °C junction temperature rating places this part in the military-temperature class — it sustains operation in avionics bay ambient, engine-mounted electronics, or downhole instrumentation where commercial or even industrial parts would hit the thermal ceiling. Vce saturation is 1.6 V maximum at 50 mA base drive and 500 mA collector current — the on-state voltage drop at the rated current gives a rough conduction loss of 0.8 W at 500 mA, which stays within the 500 mW power dissipation limit only if the duty cycle is pulsed or the ambient is well below the maximum.
Active production and compliance flag
The part is marked RoHS non-compliant — the die-attach or lead finish likely contains lead. If your BOM requires RoHS exemption 7(c)-I (lead in high-melting-temperature solders) or you are building to a military/hermetic spec that explicitly exempts lead, this is not a blocker; for commercial RoHS-mandated builds, verify your exemption coverage before committing the line.
Leakage and gain — what they mean for the circuit
Collector cutoff current is 50 nA maximum — low enough that a 10 kΩ pull-up to 60 V sees less than 0.5 mV of leakage-induced offset, making the part suitable for high-impedance analog switches or low-power keep-alive circuits where every microamp counts.