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Microchip Technology 2N2907AL — Discrete Semiconductors

Microchip 2N2907AL PNP Transistor, 600 mA, 60 V, TO-18

MPN2N2907AL
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Microchip Technology 2N2907AL PNP transistor, 600 mA collector current, 60 V Vce breakdown, 500 mW power dissipation, TO-206AA / TO-18-3 metal can, through-hole, bulk.

$4.2750Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

2N2907AL specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown60 V
Current - collector (Ic)600 mA
Current - collector cutoff50nA
DC current gain (hFE) (Min) @ ic, vce100 @ 150mA, 10V
Power - max500 mW
Operating temperature-65°C~200°C(TJ)
PackageBulk
CaseTO-206AA, TO-18-3 Metal Can
Vce saturation (Max) @ ib, ic1.6V @ 50mA, 500mA

Product details

TO-18 metal can, 600 mA PNP switch

The 2N2907AL is a PNP switching transistor in a hermetically sealed TO-18 metal can — the package that dominated military and aerospace sockets for decades. Rated 600 mA continuous collector current and 60 V collector-emitter breakdown, it handles moderate loads in legacy and new designs where the metal can's reliability and thermal cycling tolerance beat plastic. The TO-18 (TO-206AA) three-lead can sits in a 0.230-inch diameter footprint with a 0.100-inch lead spacing — a direct drop-in for any board originally laid out for the 2N2907 family. The metal enclosure provides a hermetic seal against moisture and outgassing, making it a fit for sealed modules, avionics, and downhole instrumentation where plastic-packaged parts risk popcorn cracking.

Parametric ceiling — 500 mW at 200°C junction

Power dissipation is rated 500 mW at 25°C ambient, derating to zero at 200°C junction. For a 24 V rail switching a 150 mA relay coil, the transistor dissipates roughly 360 mW at saturation — within the 500 mW ceiling but leaving little margin for a hot enclosure. DC current gain (hFE) is guaranteed minimum 100 at 150 mA collector current with 10 V Vce — a solid beta for a general-purpose switch. The 1.6 V Vce(sat) at 50 mA base and 500 mA collector is the on-state voltage drop; at 500 mA the transistor dissipates 0.8 W in saturation, exceeding the 500 mW package limit unless pulsed or heatsunk.

Frequently asked questions

What are the key electrical ratings for 2N2907AL?

PNP transistor, 600 mA maximum collector current, 60 V collector-emitter breakdown voltage, 500 mW power dissipation at 25°C. DC current gain (hFE) is minimum 100 at 150 mA, 10 V. Operating junction temperature range is -65°C to 200°C.